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“Micron’s Billion-Dollar Bet on Advanced Memory”

January 5, 2025

Billy Yang

Micron, a major U.S. semiconductor company, is continuously expanding its DRAM production capabilities, building on substantial government subsidies. Following strategic investment plans laid out late last year, Micron is set to upgrade its Manassas, Virginia, manufacturing facility with a budget of $2.17 billion. This facility, which dates back to early 2000s and received updates in 2018, will now focus on producing advanced DRAMs for sectors such as automotive, aerospace, and defense. The U.S. Department of Commerce has pledged $275 million to support this initiative, reflecting the government's aim to strengthen domestic memory chip manufacturing.

In parallel, Micron is pursuing high-scale investments across Idaho and New York, with allocated budgets of $25 billion and $100 billion, respectively, for expanding DRAM capabilities, aided by $6.165 billion in federal subsidies. Moreover, the company's efforts extend to Taiwan, where it acquired two AUO facilities for $350 million in 2023. These facilities are being converted to high-bandwidth memory (HBM) production lines to bolster advanced chip manufacturing.

Meanwhile, Korean competitors Samsung and SK Hynix are also progressing their DRAM transition projects. Samsung has been overhauling its Pyeongtaek and Hwaseong lines to shift from legacy DRAM to 1b (5th-generation 10nm-class) DRAM, and has initiated production lines for next-gen 1c (6th-generation 10nm-class) DRAM. SK Hynix is similarly upgrading its Icheon M14 and M16 plants to focus on advanced memory solutions, with significant progress in M16's bottom-layer investments.

With these investments, the U.S. aims to boost its market share in advanced memory chip manufacturing from under 2% in 2025 to approximately 10% by 2035. By focusing on innovation and scaling up cutting-edge technologies, both Micron and U.S. policymakers hope to challenge dominant market players while bridging global supply chain gaps.

< Summary >

Header: Micron and U.S. Semiconductor Advancements
Details:
- Micron invests $2.17 billion to upgrade its Manassas facility for advanced DRAM production in sectors like automotive and defense.
- Other U.S.-based projects include investments of $25 billion in Idaho and $100 billion in New York, funded by $6.165 billion in federal grants.
- Taiwan facilities, purchased in 2023 for $350 million, are being retrofitted for HBM line production.
Primary Message: The U.S., led by Micron, seeks to amplify domestic memory chip manufacturing capabilities, aspiring to significantly increase its global market share by 2035. Simultaneously, Samsung and SK Hynix continue pushing forward in memory tech to maintain competitiveness.

< 핵심내용 요약 >

주요 내용: 마이크론, DRAM 생산능력 확장을 위한 대대적 투자
세부 내용:
- 마이크론, 자동차·우주항공·방위 산업을 위한 첨단 DRAM 생산 계획으로 버지니아주 매나사스 팹에 약 2조 9천억 원 투자.
- 아이다호주 및 뉴욕주 프로젝트에 각각 2조 5천억 원, 12조 원 배정, 동시에 8조 5천억 원 보조금 확보.
- 2023년 대만 공장 2곳 인수 후 HBM 생산 라인으로 전환 진행 중.
전하는 메시지: 미국은 마이크론 주도로 반도체 메모리 공급망을 강화하고 있으며, 2035년까지 시장 점유율을 10%까지 확대를 목표로 하고 있다. 삼성과 SK하이닉스는 이에 맞서 DRAM 전환 및 신기술 투자를 강화하고 있다.
Crafted by Billy Yang
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Micron and U.S. Semiconductor Subsidies